Sr. GaN Power Amplifier Designer

Job DescriptionJob Description

Are you passionate about pioneering innovations in the semiconductor industry? At Falcomm, we are on a mission to transform semiconductor technologies into tangible, real-world solutions. We specialize in crafting energy-efficient power amplifier products that set the standard for excellence in performance. As a Sr GaN Power Amplifier Designer, you will join our dedicated team of experts who are committed to pushing the boundaries of semiconductor technology. Your role will be instrumental in shaping products that not only meet but exceed our customers' expectations.

We are looking for an individual who thrives in a fast-paced environment, is eager to contribute to cutting-edge projects, and is motivated by the challenge of creating real-world applications of semiconductor innovation. If you have a creative mindset and a strong background in RFIC design, we invite you to come and make your mark at Falcomm, where innovation meets sustainability in energy-efficient solutions. Become part of a dynamic team where your skills and ideas can truly elevate the field of semiconductors and help us fulfill our vision of delivering unmatched power amplifier technologies.

GaN RFIC Power Amplifier Designer

RESPONSIBILITIES :

Lead the research and development of a new ultra-efficient MMIC power amplifier product line in state-of-the-art GaN processes

Derive specifications for the MMIC subsystems and circuits

Design the transistors, MMICs, passive devices and other on-chip matching networks, using state-of-the-art simulation tools.

Model package and external parasitic components

Evaluate and characterize prototypes of the design

Requirements

PhD / Master in Electrical Engineering or a related field; with an educational emphasis on RF / microwave integrated circuits design.

5+ years of proven experience in RFIC design and development, including specific experience designing power amplifiers (PAs) in GaN technologies.

Demonstrated experience in end-to-end GaN power amplifier design, from initial concept and schematic design through layout, validation, and production release. Must have successfully designed and delivered at least one GaN PA that has been shipped in volume production.

Strong circuit design skills, and experience performing analysis and simulation of both linear and non-linear circuits for power amplifiers and other related RF circuit blocks like LNAs and switches.

Procifiency in simulation and design tools such as Cadence (Virtuoso) / Agilent ADS / Mentor tools / HFSS. And / or experience using simulation tools such as Keysight PathWave Designs Suite (ADS, SystemVue, GoldenGate, Momentum), and Spectre.

Must be willing to work on-site full-time at our office in Atlanta, GA.

skills :

RF / microwave design experience in the GSM band, Ku-band, K-band and Ka-band frequency range

Knowledge of RF transceiver architectures, digital communication systems, spread spectrum, single and multi-carrier techniques and modulation types such as QPSK, APSK and QAM

Familiarity with RF related test equipment such as spectrum analyzers, vector signal analyzers, vector signal generator, network analyzers, and hands-on experience in a lab with equipment for RF testing and measurement.

Benefits

Stock option plan

Medical, dental, and vision

Paid time off

Family leave

DISCLOSURE

Falcomm is an Equal Opportunity Employer; employment with Falcomm is governed on the basis of merit, competence and qualifications and will not be influenced in any manner by , , , , / , veteran status, status, , , , marital status, mental or physical or any other legally protected status.

Applicants wishing to view a copy of Falcomm’s Affirmative Action Plan for veterans and individuals with disabilities, or applicants requiring reasonable accommodation to the application / interview process should notify Falcomm.

To conform to U.S. Government export regulations, including the International Traffic in Arms Regulations (ITAR) you must be a U.S. , lawful permanent of the U.S., protected individual as defined by 8 U.S.C. 1324b(a)(3), or eligible to obtain the required authorizations from the U.S. Department of State.